Uncooled 4.2 μm light emitting diodes based on InAs 0.91Sb 0.09/GaSb grown by LPE

Abstract

The report describes the epitaxial growth and fabrication of efficient room temperature InAs 0.91Sb 0.09 semiconductor light-emitting diodes operating in the infrared wavelength region at 4.2 μm. These devices have attracted much recent interest as viable infrared light sources for use in carbon dioxide detection. A study of the LPE growth of lattice matched InAs 1− x Sb x onto GaSb substrates from Sb-solution by the supercooled growth method is described. The electrical transport properties and photoluminescence are presented. The n-i-p-InAs 0.91b 0.09/P-GaSb light emitting diodes (LEDs) are studied and the quantum efficiency is discussed.