Abstract
The nature of the transition between double-stepped and single-stepped structures of vicinal Si(001) surfaces is investigated theoretically. By using the transfer-matrix method and the elastic monopole and dipole step-step interactions, modified in such a way that they are valid at small step separations, it is predicted that the double steps, which are stable only at low temperatures and large miscut angles ( θ ≥ 1.37°), gradually unbind into pairs of single steps as T is increased or θ is decreased. The recently published experimental data support the proposed model.
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