Ultrawide‐Band Unidirectional Surface Plasmon Polariton Launchers

Abstract

Plasmonic devices and circuits, bridging the gap between integrated photonic and microelectronic technology, are promising candidates to realize on-chip ultrawide-band and ultrahigh-speed information processing. Unfortunately, the wideband surface plasmon source, one of the most important core components of integrated plasmonic circuits, is still unavailable up to now. This has seriously restricted the practical applications of plasmonic circuits. Here, we report an ultrawide-band unidirectional surface plasmon polariton launcher with high launching efficiency ratio and large extinction ratio, realized by combining plasmonic bandgap engineering and linear interference effect. This device offers excellent performances over an ultrabroad wavelength range from 690 to 900 nm, together with a high average launching efficiency ratio of 1.25, large average extinction ratio of 30 dB, and ultracompact lateral dimension of less than 4 um. Compared with previous reports, the operating bandwidth is enlarged 210 folds, while the largest launching efficiency ratio, largest extinction ratio, and small feature size are maintained simultaneously. This provides a strategy for constructing on-chip surface plasmon source, and also paving the way for the study of integrated plasmonic circuits.