Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have been proven to possess many properties benefit for application to photodetectors such as high carrier mobility, wide range band gaps which is ideal for ultraviolet to near-infrared spectrum detection and adjustable band structure related to the number of layers, etc. In this regard, a photodetector based on two-dimensional exfoliated tungsten selenide (WSe2) is prepared. The device exhibits stable and broadband photo response in the range of 375–1064 nm Ultraviolet–Visible-Near-infrared (UV–Vis-NIR), a short response time of 120 ms, high responsivity and detectivity of 8.573 A W−1 and 1.210 × 1010 Jones, respectively. The measurements are conducted at a low bias voltage of 2 V, and energy consumption is relatively small. We believe that this work of a WSe2 photodetector proves it a kind of TMDs having potential in the future.
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