Abstract
Ultraviolet Raman scattering spectra of InxGa1-xN films with different In compositions were investigated using 325nm laser line. For photon energy above the energy gap, strong enhanced 2A1(LO)phonon scattering lines were observed. Four 2LO peaks shift from twice the energy of the first-order LO peak, to the high energy end and the shifts increase with In contents in the samples. It is attributed to the multiple resonance resulting from intraband-Frhlich interaction. The composition dependence of LO phonon mode frequency and line shape was analysed. The phase separation was observed in Raman spectra and compared with the data of X-ray diffraction. Furthermore, the E2 phonon combination mode of InxGa1-xN was observed at about 1310cm-1.
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