Abstract

Valence-band and conduction-band electronic structure of Cr 1− δ Te (0.05 ≤ δ ≤ 0.375) has been investigated by means of photoemission and inverse-photoemission spectroscopies (UPS and IPES). The Cr 3d (t 2g)↑ peaks are observed at −1.2 eV relative to the Fermi level, almost independent of δ. On the other hand, Cr 3d (t 2g)↓ peaks around 1.5 eV shift toward higher energy side with increasing δ. It is clearly observed that the structures due to the Te 5p states move from the UPS to IPES side near E F.

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