Abstract
We present the characteristics of ultraviolet photodiodes based on Schottky barriers to the Aluminum Gallium Nitride (AlGaN) solid solution. The paper is devoted to the creation of ohmic and rectifying contacts to AlxGa1−xN solid solutions with a high (x > 0.5) proportion of AlN. The most important property of (AlxGa1−xN) materials is their solar blindness: the wide bandgap (Eg = 3.4 eV for GaN; 6.2 eV for AlN) makes these materials insensitive to the visual and IR light. The study of solid solutions with various mole fractions of Al has created solar-blind and see-blind ultraviolet photodetectors.
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