Abstract
In this paper, an ultraviolet (UV) photodiode in p-n heterojunction configuration is fabricated from TiO2 nanorods hydrothermally deposited on p-type silicon substrate. Under UV illumination condition, the heterojunction photodiode shows superior UV detection capability achieving a photoresponsivity of 1.41 A/W, a photosensitivity of 80 and a detectivity of 8.32 × 1011 Jones with a quick response speed of 25 ms. More significantly, the presented fabrication approach can be applicable to other metal–oxide semiconductor based optoelectronic devices.
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