Abstract
A-plane ZnO film was grown on a-plane GaN/r-sapphire template by using the hydrothermal growth method. The film was characterized for the structural and morphological properties by means of x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The results show the a-plane ZnO film with a very uniform striated morphology was achieved. Meanwhile, an ultraviolet (UV) photoconductive detector based on the as-grown a-plane film was fabricated, and the detector current was increased by more than 17 times under 5 V bias upon UV illumination. Moreover, it also showed good reproducibility and stability, which confirms the film as a good potential material for UV optoelectronic devices.
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