Abstract
This chapter discusses that Zinc oxide (ZnO) of wide band gap of 3.3eV is one of the candidates for ultraviolet (UV) optical devices. Recently, Reynolds et al. fabricated a UV laser device made of ZnO thin films and Tang et al. fabricated a UV laser with high emission efficiency. An advantage of ZnO as UV optical materials is that the exciton binding energy in ZnO is much larger than that in the other semiconductor materials. The drawback on the use of ZnO as a UV emitting material is that the occurrence of visible light emission due to defects and/or impurities decreases the UV emission efficiency. It discusses that single crystals of ZnO were grown by a flux method and their luminescence properties were measured by means of Cathodoluminescence (CL). The position dependence of CL spectra and depth profiling of impurity concentration were compared to elucidate the effects of impurities and defects upon emission properties.
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