Abstract
Ultraviolet light emission with wavelength of 360–370 nm has been observed from porous silicon (PS) samples properly oxidized at high temperature. The intensity rather than the peak location of ultraviolet light varies with anodization conditions and the oxidation at 1150°C can severely reduce the intensity of ultraviolet light, but the effect of the latter is stronger than that of the former. It is concluded that both the nanoscale silicon particles and the luminescence centers in Si oxide layers covering them play the key role in the ultraviolet light emission from PS.
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