Abstract
Ultraviolet stimulated emission has been observed from Cd x Zn 1− x S-ZnS strained-layer multiple quantum wells under both optical pumping at room temperature and pulsed current injection at 30 K. An exciton-related mechanism of optical gain formation was also studied on the basis of a partial phase-space-filling effect of excitons localized at the lower energy states of inhomogeneously broadened exciton resonance. It is proposed that the localization of excitons contributes to the formation of optical gain in wide-bandgap II–VI semiconductor quantum wells.
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