Abstract
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.
Highlights
By employing ZnO as a representative, we show that by employing the electrostatic doping method, quasi p-n junctions have been formed, and by applying forward bias to the quasi p-n junctions, ultraviolet (UV) lasing has been observed
None report on lasers realized via electrostatic doping route can be found before to the best our knowledge
When a forward bias voltage is applied onto the quasi p-n junctions formed via the electrostatic doping method, the electrons in the undoped region will be injected into the inversion region, and recombine with holes there, emission may be obtained
Summary
By employing ZnO as a representative, we show that by employing the electrostatic doping method, quasi p-n junctions have been formed, and by applying forward bias to the quasi p-n junctions, ultraviolet (UV) lasing has been observed.
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