Abstract
The temperature $(T)$ dependent gap formation in the density of states (DOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing $T$, the evolution of a small gap $(\ensuremath{\sim}60\phantom{\rule{0.3em}{0ex}}\mathrm{meV})$ at the Fermi level is observed in the DOS, indicating a $p$-type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at $5\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ in accordance with transport and optical experiments. The $T$ dependence of the gap, which gets smeared out quickly at high $T$ as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.
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