Abstract

Metallic vanadium ultrathin films deposited on the TiO 2 (110) surface are easily oxidised to VO 2 when they react with O 2 in the high vacuum pressure range. We have found that the oxidation can be stopped at VO x ( x≈1) when annealing of the metal film is carried out in UHV, by exploiting the reaction with bulk-to-surface diffusing oxygen. By adopting carefully optimised experimental conditions (e.g. metal film thickness and annealing temperature), locally ordered VO x films with a thickness of up to 5 ML can be prepared. X-ray photoelectron spectroscopy and angle-scanned photoelectron diffraction, as an in situ structural characterisation tool, have proven to be extremely useful in order to find optimised conditions for the whole process.

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