Ultrathin SiO2 Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

Abstract

Atomic layer deposition of SiO2 using tris(dimethylamino)silane and ozone were studied comprehensively. It was found that SiO2 grew linearly at different temperatures while the growth rate increased at higher temperatures. For thickness <3.5 nm, the direct tunneling current of the ALD SiO2 is comparable to that of thermally grown SiO2 when considering its equivalent oxide thickness (EOT). ALD could grow high-quality conformal SiO2 films on non-silicon substrates and on high aspect-ratio pores and nanostructures. The ALD SiO2 can be used as high-quality gate insulators for thin-film MOS transistors, and insulators for sensor structures and nanostructures on non-silicon substrates.