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Abstract
Special techniques are needed to reliably measure the ultra thin film and interfacial properties. For this purpose we have used and/or further developed several techniques: Fowler–Nordheim (FN) electron tunneling current oscillations (FNCOs); spectroscopic ellipsometry (SE); a novel application of SE called spectroscopic immersion ellipsometry (SIE); atomic force microscopy (AFM) along with Fractal analysis. In this study we review our recent results on ultra thin SiO2 films for film thickness measurements, the kinetics of the initial regime of Si oxidation, and interfacial roughness and the effects of roughness on Si oxidation and interfacial electronic properties.
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