Abstract
We have built a model organic field-effect transistor that is basically composed of a single layer of pentacene crystal in interaction with an oxide surface. Drain and source contacts are ohmic so that the pentacene layer can carry a current density as high as 3000 A cm−2 at a gate voltage of –60 V. Four-probe and two-probe transport measurements as a function of temperature and fields are presented in relation with structural near-field observations. The experimental results suggest a simple two-dimensional model where the equilibrium between free and trapped carriers at the oxide interface determines the OFET characteristics and performance.
Highlights
In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) used in active matrix flat panel displays and other large-area electronics applications [1, 2]
A series of thin-film OFETs with different pentacene thicknesses were fabricated on a SiO2 gate dielectric followed by low-temperature gold deposition of the source-and-drain contacts
The pentacene film thicknesses in these devices ranged from 5 nm to 100 nm
Summary
Thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) used in active matrix flat panel displays and other large-area electronics applications [1, 2]. As will be seen in this paper, measurements on these devices indicate that conduction in the ultrathin transistor involves one or at most two layers of pentacene, even at low gate fields.
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