Abstract
Metal-semiconductor multilayers are interesting, artificial structures as prospective candidates for spin injection devices. A Fe–Ge multilayer sample with very thin individual layers (few crystallographic planes) has been deposited by sputtering on Si[1 0 0] substrate. We have characterized the structure of this multilayer sample using X-ray diffraction, X-ray reflectometry and neutron reflectometry. The magnetic moment density in the ferromagnetic Fe layer has been obtained by polarized neutron reflectometry and the bulk magnetic behavior of the thin film by SQUID magnetometer measurements. We found that the film is a soft ferromagnet at room temperature with a substantially reduced magnetic moment of the Fe atoms.
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