Abstract
The application of thin semiconductor layers as etch masks for high vacuum lithography is described. Heteroepitaxial layers of In0.53 Ga0.47 As or InP, as thin as 30Å, were grown by molecular beam epitaxy and patterned using a focused beam of Ga ions. The patterned thin layer is then used as a mask for deep, material selective etching. This combination of molecular beam epitaxy and efficient precise patterning techniques is expected to result in a new flexibility in design and fabrication of semiconductor devices.
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