Abstract
Ultrathin oxides have been reported to possess excellent properties in electronic, magnetic, optical, and catalytic fields. However, the current and primary approaches toward the preparation of ultrathin oxides are only applicable to amorphous or polycrystalline oxide nanosheets or films. Here, we successfully synthesize high-quality ultrathin antimony oxide single crystals via a substrate-buffer-controlled chemical vapor deposition strategy. The as-obtained ultrathin antimony oxide single crystals exhibit high dielectric constant (~100) and large breakdown voltage (~5.7 GV m−1). Such a strategy can also be utilized to fabricate other ultrathin oxides, opening up an avenue in broadening the applicaitons of ultrathin oxides in many emerging fields.
Highlights
Ultrathin oxides have been reported to possess excellent properties in electronic, magnetic, optical, and catalytic fields
To achieve the growth of ultrathin antimony oxide single crystals, commercial antimony powder is placed upstream to provide antimony vapor, and the Ag substrates are placed in the downstream area with temperature T = 750 °C
The growth starts while O2 is introduced into the system, and the growth process is maintained for a few minutes
Summary
Ultrathin oxides have been reported to possess excellent properties in electronic, magnetic, optical, and catalytic fields. Synchrotron-based X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) are conducted to elucidate the structure of such ultrathin antimony oxide single crystals.
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