Abstract
Ultrathin SiO2 grown by plasma-assisted oxidation (plasma oxide) has been investigated by high-resolution x-ray photoemission spectroscopy and medium energy ion scattering spectroscopy. We found that the plasma oxide grown at the low temperature of 400°C has a thinner transition layer than conventional thermal oxide. This thinner transition layer in the plasma oxide not only decreased the gate leakage current effectively, but also enhanced the reliability of the gate oxide. We attribute these electrical properties of the plasma oxide to the reduction of the transition layer.
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