Abstract
Ferromagnetic MnAl (L10-MnAl phase) ultrathin films with thickness varying from 1 to 5 nm have been epitaxially grown on a GaAs (001) substrate. A coercivity above 8 kOe has been obtained with no need of a buffer layer by tuning the sample preparation and the growth parameters. Surface and interface analysis carried out by in situ characterization techniques (x-ray photoelectron spectroscopy and low energy electron diffraction), available in the molecular beam epitaxy chamber, has shown the formation of a ferromagnetic interface consisting of Mn-Ga-As-Al, which contribution competes with the MnAl alloyed film. The appearance of this interface provides important information to understand the growth mechanism of MnAl-based films reported in the literature.
Highlights
Ultrathin films of L10-MnAl on GaAs (001): A hard magnetic MnAl layer onto a soft MnGa-As-Al interface
Thin films with perpendicular magnetic anisotropy are attracting a lot of interest in spintronic devices, in particular in STT-MRAM (Spin-Transfer-Torque Magnetic Random Access Memory) and p-MTJs.[1,2]
The L10MnAl is a rare-earth free material that it has been proposed for certain applications as rare earth free permanent magnets,[6,9,10,11,12,13,14] due to their well known high magnetic anisotropy constants.[1,15]
Summary
Ultrathin films of L10-MnAl on GaAs (001): A hard magnetic MnAl layer onto a soft MnGa-As-Al interface.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
