Abstract
The Cu/Ru(1 0 1¯ 0) adsorption system was investigated by STM, LEED and AES. Cu was deposited at room temperature (RT) and 800K, with the coverage ranging from a fraction up to 4 bilayers (BL). The first two Cu BL grow in the bilayer-by-bilayer mode. Their structure is pseudomorphic and does not depend on the temperature. For coverage higher than 2BL, Cu deposited at elevated temperature forms three-dimensional islands in mesa shape with Cu(111) facets on their tops. The facets and the substrate are epitaxially oriented with Cu(1 1 1)||Ru(1 0 1¯ 0) and Cu[0 1 1¯]||Ru[1 2¯ 1 0]. Obtained results can be helpful in search for an optimal method of Cu deposition onto Ru in the damascene process in microelectronics, and could be also of interest to catalysis.
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