Abstract
ABSTRACTPoint defects and thermal stability of ultrathin Cu films (3–200 Å) deposited on Mo(110) substrate at 300 K have been characterized using thermal helium desorption spectrometry (THDS). Implantation of the samples (10–100 Å Cu/Mo) with 1000 eV He+ aided in detecting He release from monovacancy in Cu films and desorption of the films (above 1200 K) from Mo substrate. A thickness dependent peak is identified in the helium desorption spectra, which is shown to be due to the process of island formation in the Cu films, using pre-implantation annealing treatments for the 40 Å film. Native defects in the films (3–200 Å) were probed using 75 eV He+ implantation.
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