Abstract

MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime [1, 2]. From this viewpoint, attentions have recently been paid to III-V and Ge channels. This is because III-V semiconductors have extremely high electron mobility and low electron effective mass and Ge has extremely high hole mobility and low hole effective mass. In addition, ultra-thin body structure is mandatory for MOSFET with future technology nodes for suppressing short channel effects. In this presentation, the critical issues and the present status of ultrathin body III-V/Ge MOSFETs are addressed.

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