Abstract
Formation of ultrathin amorphized Si layer by femtosecond laser irradiation is reported in this letter. Below the fluence of ablation threshold, femtosecond laser irradiation induced an amorphization of crystalline Si. The authors confirmed the thickness of amorphous Si layer by transmission electron microscope. The thickness of the amorphized layer was found to be quite uniform and did not depend on the number of irradiated laser pulses and fluence, which was related to the effective light penetration depth.
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