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Abstract
Hybrid organic–inorganic photovoltaic devices consisting of poly(3,4-etyhlenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n-type silicon have recently been investigated for their cost-efficiency and ease of fabrication. We demonstrate that the insertion of an ultrathin Al2O3 layer between n-Si and PEDOT:PSS significantly improves photovoltaic performance in comparison to the conventional interfacial oxide employing SiO2. A power-conversion efficiency of 11.46% was recorded at the optimal Al2O3 thickness of 2.3 nm. This result was achieved based upon increased built-in potential and improved charge collection via the electron blocking effect of Al2O3. In addition, the hydrophilicity enhanced by Al2O3 improved the coating uniformity of the PEDOT:PSS layer, resulting in a further reduction in surface recombination.
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