Abstract
The new effect of ultrasound-stimulated regeneration of the ground state of EL2 centres is observed and investigated. A regeneration transition, metastable (EL2*)-to-ground (EL20), is caused by ultrasound vibrations induced in a GaAs wafer at a temperature 105-120 K after bleaching of EL2 centres with 1.2 eV light. The EL2-related absorption band and the luminescence band with a maximum of 0.64 eV are examined. The kinetics of the ultrasound EL2 regeneration and the dependence of the number of regenerated EL2 centres on ultrasound strain are measured at different temperatures. Relevant mechanisms for the regeneration are discussed, and the arguments in favour of the dislocation model are presented.
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