Abstract
We examined the amplification of ultrasonic waves in a GaAs solid state plasma. We used a set of quantum fluid equations to investigate the effects of plasma components quantum recoil, exchange-correlation forces, and quantum pressure of plasma carriers. Characteristic parameters of doped n-GaAs, p-GaAs, and n-p-GaAs semiconductors are used to evaluate the ultrasonic gain applying the dispersion relations and their modifications. It is found that the frequency of ultrasonic waves can be impressed by exchange-correlation potential, and the gain has a sensitivity to variation of density wave frequency and drift velocity. The results reveal the propagation of ultrasonic waves via a GaAs plasma reduces the gain coefficient.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
