Ultrasonic Velocity and Electrical Conductivity in p-InSb at Low Temperatures and High Magnetic Fields

Abstract

The piezoelectric interaction in semiconductors connects the ultrasonic velocity and attenuation variations to the electrical conductivity [1]. The ultrasonic techniques offer then the possibility to measure the ac conductivity in a frequency range which is generally hardly accessible for conventional techniques. The ultrasonic investigation of p-InSb at low temperatures is susceptible to give very interesting and important information on the conduction regimes at low temperatures (4–20 K) [2]. We are particularly interested on how the activation and hopping regimes are affected by high magnetic fields and relatively high frequencies. We have thus measured in the low — temperature range the ultrasonic velocity in p-InSb samples having different majority carrier concentration. The results have given the opportunity to evaluate with a good precision the frequency and magnetic field effects on the low-temperature conduction regimes.KeywordsVelocity VariationHigh Magnetic FieldUltrasonic VelocityActivation RegimeUltrasonic InvestigationThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.