Ultrasonic Spray Deposition of a‐IGZO Thin Film Transistor on Substrate with Hydrophilic Patterns

Abstract

Solution‐processed amorphous Indium Gallium Zinc Oxide (a‐IGZO) is a promising method for lower down the fabrication cost a‐IGZO thin‐film transistor (TFTs). Here we demonstrate an ultrasonic sprayed a‐IGZO TFT, whose fabrication is assisted by hydrophobic parallel stripe patterns to circumvent the coffee‐ring effect. Device mobility of the sprayed a‐IGZO TFT is estimated to be 1.74 cm2 V−1 s−1.