Abstract

The ground state of lightly doped acceptors in Ge can be expressed by randomly distributed two-level system. The ultrasonic waves are absorbed resonantly associated with hole transitions within the ground state.1 The relaxation of the excited holes to the thermal equilibrium is characterized by the longitudinal relaxation time T 1 and the transverse relaxation time T 2. The relaxation times were measured by the ultrasonic hole-burning technique in Ge sample doped with Ga of 3.5x1015cm-3 at liquid helium temperatures.

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