Ultrasonic attenuation in the superconducting and intermediate states of pure and doped type I superconductors

Abstract

The attenuation of longitudinal ultrasonic waves has been measured in single crystals of indium (99.999%), indium doped with 0.003 at % of tin, and indium doped with 0.002 at % of bismuth in the intermediate and superconducting states over the frequency range 10–30 MHz. For the bismuth-doped indium specimen, measurements were taken for three different physical states, i.e., for three different dislocation densities, and for the indium and the tin-doped indium specimens, measurements were for one physical state. For a particular measurement, the same physical state was maintained both in the intermediate and superconducting states. A temperature-dependent oscillatory behavior of the ultrasonic attenuation was observed in the intermediate state in all the three specimens, but in the superconducting state the oscillatory behavior was observed only in the bismuth-doped specimen. Two phases have been identified in the superconducting layers of the intermediate state and there is only one phase in the superconducting state of the bismuth-doped sample. The origin of the two phases in the intermediate state and that of the single phase in the superconducting state of the bismuth-doped sample are discussed. A qualitative explanation is presented for the occurrence of oscillatory attenuation in the intermediate state irrespective of the nature of the dopant and the selective occurrence of oscillatory attenuation in the superconducting state due to the nature of the dopant.