Abstract
Laser stripping technology is an advanced processing method with high efficiency and low material loss, which can greatly reduce material loss in the production process of single-crystal SiC wafer, but the single-crystal SiC ingot still have a certain bonding force after laser modification. Ultrasonic vibration can reduce the bonding force and thus strip single-crystal SiC wafer. In order to investigate the effect of ultrasonic vibration on the reduction of the bonding force of single-crystal SiC internal modification layer, through the ultrasonic-assisted stripping of single-crystal SiC orthogonal experiment, the ultrasonic vibration parameters of ultrasonic frequency, vibration time and ultrasonic power of the three indexes of the reduction of the bonding force was analyzed. The results show that the bonding force of the modified layer decreased by 25 %–60 % after ultrasonic vibration. Variance analysis of the experiment results showed that the main factors influencing the bond strength reduction were vibration time and ultrasonic power in turn. When the vibration time is longer and the ultrasonic power is higher, the stripping force decreases more, and the stripping force of single-crystal SiC wafers decreases up to 60 % under the condition of vibration time of 5min and ultrasonic power of 700 W. Through analysis of the single-crystal SiC cross-section, distinct cleavage steps and cleavage channels are evident. The laser-modified region exhibits defect such as nano-pores, micro-cracks, and nano-particles.After the single-crystal SiC laser modification process was upgraded, the distance between the ultrasonic tool head and the single-crystal SiC was 1.5 mm can directly strip off the single-crystal SiC wafer. And eventually stripped 6-inch single-crystal sic wafers. Therefore, ultrasonic vibration can increase the internal defects in the single-crystal SiC modified layer, causing crack expansion to occur and ultimately stripping the single-crystal SiC wafer.
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