Ultrashort Vertical-Channel van der Waals Semiconductor Transistors.

Jinbao Jiang,Heejun Yang,Hyun Kim,Young Hee Lee,Hua Yu,Sang Hyun Park,Dinh Loc Duong,Manh-Ha Doan,Linfeng Sun,Min-Kyu Joo

doi:10.1002/advs.201902964

Abstract

Atomically thin 2D van der Waals semiconductors are promising candidates for next‐generation nanoscale field‐effect transistors (FETs). Although large‐area 2D van der Waals materials have been successfully synthesized, such nanometer‐length‐scale devices have not been well demonstrated in 2D van der Waals semiconductors. Here, controllable nanometer‐scale transistors with a channel length of ≈10 nm are fabricated via vertical channels by squeezing an ultrathin insulating spacer between the out‐of‐plane source and drain electrodes, and the feasibility of high‐density and large‐scale fabrication is demonstrated. A large on‐current density of ≈70 µA µm−1 nm−1 at a source–drain voltage of 0.5 V and a high on/off ratio of ≈107–109 are obtained in ultrashort 2D vertical channel FETs with monolayer MoS2 synthesized through chemical vapor deposition. The work provides a promising route toward the complementary metal–oxide–semiconductor‐compatible fabrication of wafer‐scale 2D van der Waals transistors with high‐density integration.

Highlights

Thin 2D van der Waals semiconductors are promising candidates silicon-based materials owing to the inevitable native surface states.[1,2] 2D van der for next-generation nanoscale field-effect transistors (FETs)
Controllable nanometer-scale transistors with a channel length of ≈10 nm are fabricated via vertical channels by thickness and free of surface dangling bonds are emerging as promising candidates to shrink the size of nanodevices further.[3,4,5,6,7] 2D semiconductor transistors with gate lengths of even 1 nm have been squeezing an ultrathin insulating spacer between the out-of-plane source and demonstrated with gate electrodes made drain electrodes, and the feasibility of high-density and large-scale fabricafrom single-walled carbon nanotubes,[8]
A large on-current density of ≈70 μA μm−1 nm−1 at a source–drain voltage of 0.5 V and a high on/off ratio of ≈107–109 are obtained in ultrashort 2D vertical channel FETs with monolayer MoS2 synthesized through chemical vapor deposition

Summary

Introduction

Thin 2D van der Waals semiconductors are promising candidates silicon-based materials owing to the inevitable native surface states.[1,2] 2D van der for next-generation nanoscale field-effect transistors (FETs). In contrast to conventional planar FETs, 2DVFETs are composed of a vertically aligned source, 2D channel and drain, in which the channel length can be controllably scaled down to several nanometers via implementing the thickness of the insulating spacer between the bottom and top electrodes.

Results

Conclusion