Ultrashort intrinsic-like channel FETs with nanodot-type floating gate utilizing biomaterial

Abstract

We investigated the electrical characteristics of an n–i–n-type FET of a sub-10 nm channel with nanoparticles (NPs). To fabricate the FET, a V-groove was formed in a silicon-on-insulator substrate by anisotropic wet etching. Cage-shaped proteins (ferritin) was used for the formation and placement of NPs. A solution of ferritin containing a metal oxide core was dropped onto the substrate, and spin drying was performed to arrange the NPs at the bottom of the V-groove. NPs served as a floating gate for this device. Threshold voltage (Vth) shift was confirmed as a memory operation in devices with NPs. The Vth shift was clearly observed in different types of NPs. The Vth shift was controlled along the channel length direction by a single nanodot floating gate.