Abstract
ABSTRACTUltrashallow doping of silicon wafers with boron was done by implantation of B+ or BF2+. Nickel silicide on them was formed by annealing of thin Ni layer. As it was revealed by secondary ion mass spectrometry, after the growth of NiSi, boron remains in Si just under the silicide layer, but fluorine accumulates in the NiSi layer. This accumulation suppresses agglomeration of the silicide.
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