Ultrasensitive Perovskite Photodetector Achieved When Configured with a Si Metal Oxide Semiconductor Field‐Effect Transistor

Abstract

A novel photodetecting device architecture that combines the optoelectronic property advantages of a perovskite and the amplification properties of a Si metal–oxide–semiconductor field‐effect transistor (MOSFET) to innovate a photodetecting system with ultrahigh sensitivity, especially in low‐light intensity, is demonstrated. This perovskite‐based MOSFET photodetector (PM‐PD) can respond as low as 116 nW cm−2 with extremely high responsivity 4200 A W−1. The perovskite is part of the gate dielectric to modulate the MOSFET drain current when the light intensity is changed. A direct bandgap, organic–inorganic hybrid halide perovskite with a large optical absorption coefficient, can enhance photodetector performance. However, perovskite materials are not good conductors for transporting photogenerated electrons and holes compared with single‐crystal silicon. Therefore, the perovskite was utilized as a dielectric where the capacitance is used instead. In the proposed PM‐PD architecture, changing the width‐to‐length (W/L) ratio of perovskite capacitor electrodes, can modulate the dark current from picoamperes to microamperes providing a tunable parameter for optimizing photodetecting performance. Furthermore, the capacitance of the perovskite can be modulated by frequency, which facilitates matching the capacitance of perovskite and MOSFET gate oxide—another important requirement for optimal photodetecting performance. Finally, our novel PM‐PD is commensurate with potential 3D monolithic integration.