Abstract
Low-ppb room temperature NO 2 detection is demonstrated for the first time using ultra-thin AlGaN/GaN heterostructures fabricated on silicon substrates. AlGaN/GaN shows great promise as a generic platform for (bio-)chemical sensing because of its robustness and intrinsic sensitivity to surface charges and dipoles. Here, we employ the two-dimensional electron gas (2DEG) formed at the interface of the AlGaN/GaN heterostructure for the monitoring of low-ppb NO 2 concentrations in ambient air. We find that in the presence of humidity, the interaction of NO 2 with the open gate area reversibly changes 2DEG conductivity. The dynamic range of these structures can be tuned to that of interest for air quality monitoring (0–100 ppb) by precisely back etching the open gate areas. A slope-based detection scheme in combination with periodic heating-induced gas desorption enables continuous air quality (NO 2 ) monitoring.
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