Abstract
The efficient near-infrared light detection of MoTe2 transistors has been demonstrated. The fabricated MoTe2 phototransistors show good photoresponse performances under an illumination of a 915 nm laser. The photoresponsivity and detectivity can reach to 1479 A W−1, 8.2 × 1011 Jones, respectively. Moreover, the photoresponse time can be effectively tuned by modulating the gate–source voltage. This mechanism could be explained by the depletion region width in channel is related to the gate–source voltage, and the Schottky barrier height between the MoTe2 channel and Pt source/drain metal is extracted to further confirm it.
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