Abstract
A broadband photodetector consisted by Bi2O2Te and n-Si exhibits an ultrasensitive performance in the range of 210 nm to 2400 nm.
Highlights
Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics
The high temperature needed for chemical vapor deposition (CVD) growth and the difficulty in layer transfer of 2D materials on a wafer scale has hindered the immediate integration of 2D materials on complementary metal-oxide–semiconductor (CMOS)
It responded to a broad wavelength range between 210 nm and 2.4 μm with high responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones for ultraviolet (UV) and short-wave infrared (SWIR) respectively, which is extremely sensitive in weak light detection
Summary
Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 °C for 10 min in air atmosphere. HRTEM images on the film, as shown in Supplementary Fig. 4a and b, exhibited high quality crystalline structure with crystal spacing of 0.281 nm along (110).
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