Abstract
Ultrasensitive anomalous Hall effect has been demonstrated in a SiO2/Fe-Pt/SiO2 sandwich structure. Owing to the interfacial electron scattering, the Hall resistivity is appreciably enhanced for the thin Fe-Pt layers of high quality; meanwhile, a large interfacial anisotropy is formed and further enhanced through annealing, leading to a room temperature Hall slope up to 2160 μΩ cm/T and field sensitivity of 12 000 Ω/T at Fe-Pt thickness ∼1.8 nm. This number is an order magnitude higher than the best semiconductor sensitivity. Other important technical characteristics, such as electrical resistivity and temperature coefficient, are also suitable to practical magnetic Hall sensor development.
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