Abstract

Abstract The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 107 A/W and a fast response time of 90 µs were obtained. The specific detectivity D* was measured to be 1.46 ⨯ 1013 Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.

Highlights

  • Graphene is considered as a promising material for photodetectors because of its unique properties of extremely high carrier mobility and ultra-broadband photoresponse [1,2,3,4,5,6]

  • The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity

  • The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment

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Summary

Introduction

Graphene is considered as a promising material for photodetectors because of its unique properties of extremely high carrier mobility and ultra-broadband photoresponse [1,2,3,4,5,6]. The low optical absorption and short carrier lifetime usually lead to a low photoelectric response for monolayer graphene devices [7]. Optical resonators [8, 9], metal gratings, and plasmonic nanostructures can promote the interaction between graphene and light [10,11,12], which improves the light responsivity to a certain degree. The photogating mechanism [13] based on hybrid structures of graphene with other semiconductor materials, such as quantum dots [14, 15], perovskites [16], carbon nanotubes [17], and MoS2 [18], has been shown to efficiently improve the responsivity. The responsivity was increased at the expense of response time, and the overall performance is still restricted by the photogating effect

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Conclusion

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