Abstract
We report a phase-change nonvolatile memory (NVM) concept based on a TiN∕SbTeN (N-doped Sb2Te3) double-layer structure, which can be used for ultramultiple-level storage (UMLS). SbTeN shows a gradual resistivity drop and good phase stability with increasing annealing temperature, a characteristic which makes it suitable for UMLS applications. We demonstrate that the number of distinguishable resistance levels can readily reach 16 and even higher. These levels in this study result from the initial threshold switching and the subsequent current-controlled crystallization induced by Joule heating. The latter allows the creation of many distinct levels, thus, enabling the low-cost ultrahigh-density NVM.
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