Abstract
In order to flatten any crystal orientation Si surface including Si-fin-structure and to introduce the flattening process just before the gate oxide formation in the latest LSI manufacturing process, it is strongly required that the flattening process is carried out at lower temperature. By introducing Xe/H2 plasma flattening at 400 oC just before the gate oxide formation, the breakdown field intensity (Ebd) was improved and Ebd fluctuation became much smaller than that of conventional.
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