Abstract
In this work, an ultra low power switching is achieved in Ta2O5-based resistive random access memory (RRAM) device through inserting AlOx film as tunneling layer. After optimizing the thickness of the AlOX layer, the operating current of the device with 15 nm AlOX is reduced to lower than 100 nA with a switching window about 151, and the ultra-low power consumptions of 586 pW and 40.2 nW are achieved for set and reset process, respectively. According to the local conductive filament formation characterization from high-resolution transmission electron microscope and the calculation from Schottky emission formula, a switching mechanism based on the formation of local oxygen vacancies conductive filament in AlOX layer is proposed to explain the ultralow power switching of the Ta2O5/AlOX bilayer synergistic RRAM device.
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