Ultralow Operating Voltage Nb2O5-Based Multilevel Resistive Memory with Direct Observation of Cu Conductive Filament

Abstract

Amorphous Nb2O5 is proposed as the resistive switching layer for conductive bridge random access memory. The Nb2O5 device is fabricated with the top Cu and bottom Au electrodes, which is fabricated at a fully room temperature process, exhibiting excellent resistive switching performance with an on/off ratio of up to 105 and ultralow operating voltage. The multilevel resistive switching characteristic can be rationally demonstrated by changing the compliance current in the Nb2O5 device. Each level of the resistance state is uniform with distinguishable read windows. The reset voltage reduces significantly as the compliance current decreases, which is merely 0.002 V when the compliance current is 10–5 A. An approach of the broken-down device is elaborately developed to firmly identify the migration of Cu and the existence of a Cu conductive filament and to explain the ultralow operating voltage. Amorphous Nb2O5 devices exhibit excellent resistive switching performance, proving it is a promising material for memory applications.