Abstract
We introduced a high porosity ultralow- film into a Cu damascene interconnect without increasing the dielectric constant of a low- film after interconnect formation. A high elastic modulus (9 GPa) with ultralow- value was achieved by using a self-assembled porous silica film formed with UV irradiation and a silylation anneal. Performing the silylation anneal after trench etching results in recovery of the value and dielectric properties. A sidewall protection process carried out before metalization protects the low- film against process-induced damage. The time-dependent-dielectric breakdown lifetime is 10 years at a high electric field of 2.3 MV/cm.
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