Ultra-low DC power GaAs HBT S-band low noise amplifiers

Abstract

We report on a 2.1 mW low DC power GaAs HBT LNA with 2.0 dB noise figure and 8.9 dB gain at 2 GHz. This amplifier achieves a Gain/NF/spl middot/P/sub dc/ ratio figure of merit of 2.10 (1/mW) which is the highest reported at S-band. Under low DC power bias of 2 V and 0.46 mA (0.92 mW), the amplifier achieves 5.2 dB gain, 3.01 dB noise figure and a Gain/P/sub dc/ figure of merit of 5.65 (dB/mW) which is also the highest reported in this frequency band. The HBT LNA consumes an area of 1.05/spl times/0.82 mm/sup 2/ and is fabricated using a relaxed 3 /spl mu/m emitter width low cost GaAs production foundry process. The high performance obtained from HBTs at vary low DC bias makes them attractive for portable wireless consumer applications. >